Exchange coupling film and magnetoresistance effect element
US5756191A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1997 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Jan 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.