Semiconductor laser having a transparent light emitting section, and a process of producing the same
US5757833A · kind A · utility
41Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 1, 1996 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Nov 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1.1 .mu.m, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.