Integrated silicon pin diode electro-optic waveguide
US5757986A · kind A · utility
93Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1996 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Mar 20, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/105
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.