Semiconductor device and a method of manufacturing a semiconductor device
US5759887A · kind A · utility
11Cited by
10References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 3, 1997 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Jun 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method of manufacturing a semiconductor integrated circuit (IC) includes the steps of forming a polycrystalline silicon layer containing impurities on a semiconductor substrate; forming an oxidation-resistant insulating layer on the polycrystalline silicon layer; simultaneously forming resist patterns for forming a capacitor element and a resistor element on the oxidation-resistant insulating layer; and patterning the oxidation-resistant insulating layer and the polycrystalline silicon layer in sequence using resist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.