Patent · US Expired

Circuit structure having at least one capacitor and a method for the manufacture thereof

US5759903A · kind A · utility

17Cited by

10References

12Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Volker Lehmann · Hersbruck, DE
Michael Boy · Waging am See, DE
Wolfgang Hoenlein · Unterhaching, DE

Key dates

Filing date	Nov 13, 1995
Grant date	Jun 2, 1998
Priority date	—
Expiry date	Nov 13, 2015

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/665
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A circuit structure having at least one capacitor and a method for the manufacture thereof. The capacitor is constructed of a doped, single-crystal silicon substrate (1) that is provided with a plurality of hole openings (3) by electrochemical etching in a fluoride-containing, acidic electrolyte wherein the substrate is connected as an anode. The capacitor is further constructed of a dielectric layer (4) and of a conductive layer (5) as a cooperating electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.