Composition for oxide CMP
US5759917A · kind A · utility
144Cited by
11References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Dec 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition comprising carboxylic acid, a salt and a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.