Plasma chamber for controlling ion dosage in ion implantation
US5760405A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source for generating an ion beam of primary ions is disclosed that includes a plasma chamber and magnets positioned therein for separating the primary ions of the plasma from secondary ions within the plasma. An electrode assembly extracts the primary ions through an extractor outlet port of the plasma chamber to form an ion beam, which preferentially is shaped as a ribbon beam. The primary ions are accelerated in the form of a ribbon beam toward the target workpiece for doping the device. The magnets are oriented in the chamber to produce a uniform current density of primary ions parallel to the elongated axis of the ribbon beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.