Back-source MOSFET
US5760440A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Feb 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
A back-source MOSFET uses a source electrode on a second surface of a substrate to reduce noise which would otherwise interfere with the logic circuit of a power integrated circuit. One embodiment includes a substrate of a first conductivity type and a base layer of a second conductivity type on a first surface of the substrate. A source region is electrically connected with the substrate. A source electrode is formed on a second surface of the substrate. A further embodiment includes a substrate of a first conductivity type and a base layer of a first conductivity type on a first surface of the substrate. A source electrode is formed on a second surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.