Method of fabricating a silicon single-crystal ingot
US5762704A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 13, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Feb 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single-crystal ingot which is nearly uniform in quality over the entire length of the column portion can be obtained to produce high-quality single-crystal silicon with high product yield and has the bottom column portion having the property close to the properties of the top column portion and the middle column portion. The bottom portion does not vary in shape among product lots and can be reproduced in the same shape. The diameter D2 of the bottom portion 2 is controlled in such a manner that the outer surface of the bottom portion 2a on the column portion side has an inclination angle .theta. of 10 to 25 degrees with respect to the outer surface of the column portion 1 and extends to the outer surface of the column portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.