Target for cathodic sputtering and method for producing the target

US5762768A · kind A · utility

Assignee

• W. C. Heraeus GmbH · DE

Inventors

• Karl-Heinz Goy · Gelnhausen, DE
• David Francis Lupton · Gelnhausen, DE
• Jorg Schielke · Bruchköbel, DE
• Friedhold Scholz · Rodenbach, DE
• Bernard Serole · Romans-sur-Isère, FR
• Hans Bohmeier · Freiberg, DE

Key dates

• Filing date: Aug 8, 1996
• Grant date: Jun 9, 1998
• Expiry date: Aug 8, 2016

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C14/3414
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 .mu.m to 20 .mu.m. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.