Method for fabricating semiconductor device
US5762813A · kind A · utility
14Cited by
0References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Mar 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By using first mixed gas containing carbon atoms and fluorine atoms, a semiconductor substrate is etched. In order to remove a damage layer formed on the surface of the semiconductor substrate by this etching processing, the semiconductor substrate is etched by second mixed gas including gas containing fluorine atoms and oxygen gas having a partial pressure ratio of at least 70%. Thereafter, a semiconductor oxide film is formed on the semiconductor substrate to fabricate a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.