Method of forming a dielectric film
US5763021A · kind A · utility
26Cited by
14References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Dec 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of forming a dielectric film, a semiconductor device comprising the same, a method of operating a plasma enhanced chemical vapor deposition apparatus and a method of manufacturing a semiconductor device comprising the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.