Low distortion stencil mask
US5763121A · kind A · utility
8Cited by
8References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 20, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Nov 20, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stencil mask (10) has a membrane (14) under tensile stress and at least one pattern opening (22) formed through the membrane (14). A plurality of stress relief openings (30) are formed in the membrane for reducing stress-induced distortion of the membrane and the mask pattern. The stress relief openings (30) are positioned to relieve concentrations of stress within the membrane (14) such as those resulting from non-regularities within the pattern. In one embodiment, a screening material (56), less rigid than the membrane (14), is contained within the stress relief openings (30).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.