Method of fabricating semiconductor optical device
US5763287A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Jan 29, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making a semiconductor optical device, including an integrated laser diode and optical waveguide lens with a continuous resonator extending along a resonator length direction between a pair of resonator facets, includes forming a pair of dielectric films disposed on a surface of a substrate on which a semiconductor layer of the optical waveguide is to be grown, the dielectric films having a linear symmetry about a hypothetical line extending in the resonator length direction, having edges opposing each other and parallel to the hypothetical line, and widths perpendicular to the resonator length direction that gradually narrow toward one facet from a position in the resonator length direction of the films. A mask pattern that produces a precise layer thickness profile is easily designed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.