Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing
US5763293A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1997 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Mar 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/852
Abstract
A process wherein powder of p/n-type semiconductor thermoelectric materials expressed as (Bi, Sb).sub.2 (Te, Se).sub.3 is hot pressed under the pressure equal to or greater than 400 kgf/cm.sup.2 at 200 degrees to 400 degrees in centigrade for a time period between {(-T/5)+90} minutes and 150 minutes or at 400 degrees to 500 degrees in centigrade for a time period between 5 minutes and 150 minutes so as to increase the figure of merit by virtue of the strain left in the crystal and/or micro crystal grain, and pieces of p/n-type semiconductor thermoelectric material are assembled with electrodes so as to obtain a thermoelectric module for a high thermoelectric conversion efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.