Method for fabricating thin film transistors
US5763301A · kind A · utility
16Cited by
16References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1997 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Feb 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6717
Abstract
A method for fabricating Thin Film Transistors includes the steps of forming a gate electrode on a substrate, forming a gate insulation film and a semiconductor layer successively on the substrate, forming a sidewall spacer only at one sidewall of the gate electrode on the semiconductor layer, and forming impurity regions in the semiconductor layer on both sidewalls of the gate electrode by ion-injecting impurity ions into the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.