Cathode mounting for ion source with indirectly heated cathode
US5763890A · kind A · utility
18Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Oct 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.