Transversely injected multiple wavelength diode laser array formed by layer disordering
US5764676A · kind A · utility
44Cited by
13References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Sep 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to a laser array which can produce at least two independently addressable laser beams, each of which has fully index-guided buried optical waveguides. Specifically, the array is formed by a two-step impurity disordering process, which simplifies the fabrication of laser arrays and optoelectronic integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.