Semiconductor guided-wave optical device and method of fabricating thereof
US5764842A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Mar 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
After a shadow mask that is separate from a semiconductor substrate is used and is arranged over the semiconductor substrate via a wafer holder installed in a reaction chamber of a vapor-phase epitaxial system so that a predetermined space d can be secured, a semiconductor thin film crystal including a core layer and a cladding layer is grown by organometallic vapor-phase epitaxy. A core layer wherein the thickness of a grown film in an area which is opposite to a masking part of the shadow mask on the semiconductor substrate is reduced in the tapered shape can be readily obtained by introducing this process for growth in a normal process for fabricating a semiconductor guided-wave optical device. A semiconductor guided-wave optical device and a method of fabricating thereof wherein the thickness of a film which is to be a waveguide is tapered and the width of the waveguide is tapered without deteriorating crystallinity by a new crystal growing method using this shadow mask are obtained. It is desirable that the surface of the shadow mask be coated with a dielectric cap layer. Hereby, a beam expander-integrated laser diode which can be fabricated by an extremely simple method and e…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.