Method for forming a polycrystalline layer of ultra hard material
US5766394A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1995 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Dec 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1075
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A polycrystalline diamond layer is bonded to a cemented metal carbide substrate by this process. A layer of dense high shear compaction material including diamond or cubic boron nitride particles is placed adjacent to a metal carbide substrate. The particles of diamond have become rounded instead of angular due to high shear compaction in a multiple roller process. The volatiles in the high shear compaction material are removed and binder decomposed at high temperature, for example, 950.degree. C., leaving residual amorphous carbon or graphite in a layer of ultra hard material particles on the carbide substrate. The substrate and layer assembly is then subjected to a high pressure, high temperature process, thereby sintering the ultra hard particles to each other to form a polycrystalline ultra hard layer bonded to the metal carbide substrate. The layer of high shear compaction material is also characterized by a particle size distribution including larger and smaller particles that are distributed uniformly throughout the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.