Reversed order NIMN exchange biasing for dual magnetoresistive heads
US5766780A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1997 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Feb 14, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12958
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention includes a magnetoresistive type sensor having a first sensor layer of NiFe and a first layer of antiferromagnetic material, preferably NiMn. Portions of the first NiFe layer are deposited directly on top of the first layer of antiferromagnetic material such that the portions of the first NiFe sensor layer are in contact with the first layer of antiferromagnetic material. The first layer of antiferromagnetic material exchange couples with the first NiFe sensor layer to thereby provide domain stabilization of the first NiFe sensor layer. The first layer of antiferromagnetic material is deposited directly on top of a first baselayer of molybdenum to enhance the exchange coupling between the first NiFe sensor layer and the first antiferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.