Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US5767020A · kind A · utility
58Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1992 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Feb 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor member comprises: PA1 forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; PA1 bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and PA1 etching to remove the porous silicon layer by immersing in an etching solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.