Electron-beam lithography system and method for drawing nanometer-order pattern
US5767521A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1995 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Sep 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-beam lithography system employing an "electron holography" technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.