Ferroelectric semiconductor device having a layered ferroelectric structure
US5767543A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1996 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Sep 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.