Compound semiconductor device controlled by MIS gate, driving method therefor and electric power conversion device using the compound semiconductor device and the driving method
US5767555A · kind A · utility
6Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/206
Abstract
A compound semiconductor device including a MISFET and a thyristor connected in series wherein either the withstanding voltage between the MISFET p base layer and the thyristor p base layer is set lower than the withstanding voltage of the MISFET, the MISFET is turned off under a condition that the MISFET p base layer and the thyristor p base layer are connected via a p channel or the lateral resistance of the thyristor p base layer is reduced, thereby the safe operating region of the compound semiconductor device is extended.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.