Method for manufacturing field emission display device
US5769679A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1996 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Sep 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a method, a film for a gate electrode, exposed through the sidewall of a trench, is thermally treated to grow a thermal oxide film which is, then, removed at the lateral side of the gate electrode, to spatially separate the gate electrode from the gate insulating film in space. This method precisely controls the thermal oxide film formed at the lateral side of the gate electrode, so that the distance between the gate electrode and the electron emission cathode can be accurately adjusted. The electron emission cathodes are homogeneous in shape. Also, the reliability of the display can be improved since a silicide metal is formed on the electron emission cathodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.