Process for forming silicon dioxide film
US5770260A · kind A · utility
33Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.