Method for producing semiconductor device with heat dissipation structure
US5770513A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 2, 1995 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | May 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.