Thin film transistor device, display device and method of fabricating the same
US5771110A · kind A · utility
90Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1996 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Jul 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.