High purity titanium sputtering targets
US5772860A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1994 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Sep 19, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high-purity titanium sputtering target having controlled crystal characteristics. The uniform problem of film thickness distribution on a substrate can be solved by adopting the requirements that (a) the average crystal grain diameters at various portions of the sputtering surface of the target are 500 .mu.m or less, preferably 100 .mu.m or less, and their dispersions are within .+-.20%, and (b) the defined orientation content ratios A have dispersions within .+-.20% and (c) a Ti target crystal structure has a recrystallization structure. The problems in connection with particle generation and lowered film forming rate in collimation sputtering can be solved by adopting the requirements that (d) said orientation content ratios A are is 80% or less, preferably 50% or less, and (e) the defined orientation content ratios B are 20% or less, as necessary, in combination with the aforementioned (a) to (c) requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.