Semi-insulating wafer
US5773151A · kind A · utility
34Cited by
10References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1995 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Jun 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.