Method for producing a hydrogenated vertical-cavity surface-emitting laser
US5773319A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1997 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Apr 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconductor substrate; selectively etching peripheral portions of the antireflection layer to form a first electrode; defining laser emission portions through etching processing; forming a hydrogenated barrier over an entire surface of the resultant structure; forming a post; forming a passivation layer through the hydrogenating of the exposed top mirror layer and the portions of the active layer; forming a planarization film after the partial exposure of the top mirror and forming a second electrode pad to which the exposed top mirror layer contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.