Isolation layer of semiconductor device and method for fabricating the same
US5773351A · kind A · utility
2Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1996 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Oct 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation layer structure of a semiconductor device includes a substrate; a first insulating layer having a predetermined width and thickness which is formed in a predetermined portion of the substrate; and a second insulating layer which is formed in a predetermined portion of the substrate and which surrounds the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.