Method for manufacturing semiconductor substrate
US5773355A · kind A · utility
63Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1997 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | May 29, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes a semiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer. In a method for manufacturing such a semiconductor substrate, a semiconductor substrate including a high-density impurity layer at the side of its surface is bonded to another substrate having an insulating layer. Thereafter, the semiconductor substrate is removed, and the impurity density of the remaining high-density impurity layer is reduced by out diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.