Method of etching adjacent layers
US5773368A · kind A · utility
4Cited by
2References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 22, 1996 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Jan 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2223/026
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor component includes sputtering a first metal layer (16) over a substrate (11), sputtering a second metal layer (17) over the first metal layer (16), selectively etching the second metal layer (17) versus the first metal layer (16), selectively etching the first metal layer (16) versus the second metal layer (17), and thereafter, selectively re-etching the second metal layer (17) versus the first metal layer (16).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.