Method of forming a polycrystalline silicon layer, a thin film transistor having the polycrystalline silicon layer, method of manufacturing the same, and a liquid crystal display device having the thin film transistor
US5773844A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1996 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Aug 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
A thin film transistor includes an amorphous silicon layer formed on a substrate, a gate insulator formed on the amorphous silicon layer, a gate electrode formed on the gate insulator, source and drain contact regions of polycrystalline silicon formed in the amorphous silicon layer on both sides of the gate electrode, and source and drain electrodes formed respectively in contact with the source and drain contact regions. Particularly, the gate insulator includes a first insulating film which covers the amorphous silicon layer as a reflectivity reducing film for reducing the optical reflectivity of the amorphous silicon layer and the source and drain contact regions are formed by an annealing process for applying a laser beam to the amorphous silicon layer via the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.