Shorted anode lateral insulated gate bipolar transistor
US5773852A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1996 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Jul 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/421
Abstract
A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.