Microelectronic circuit including silicided field-effect transistor elements that bifunction as interconnects
US5773855A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1997 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Jan 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/907
Abstract
Field-effect transistors are formed on a substrate having silicided elements including diffusion (source and drain) regions and polysilicon gates. The silicided surfaces of these elements have low ohmic resistance and are used to provide interconnection between contacts that are spaced from each other, thereby freeing routing areas for other interconnections. The diffusion regions of adjacent transistors have edges that face each other, and are formed with indentations which constitute portions of a substrate tap area. The low ohmic resistance of the silicided surfaces of the diffusion regions enables the substrate tap area to be cut out of the diffusion regions without degrading the electrical performance of the transistors, thereby providing a substantial reduction in the space required for the transistors on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.