Graded electron affinity semiconductor field emitter
US5773920A · kind A · utility
6Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1995 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Jul 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3042
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emitter is disclosed comprising a graded electron affinity surface ayer. The graded electron affinity layer provides for increased transconductance, reduced energy distribution of emitted electrons, reduced noise and increased uniformity in its operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.