Apparatus for forming thin film by chemical vapor deposition
US5776254A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1995 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Dec 27, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition (CVD) apparatus for depositing a thin film on a substrate by CVD has a material container for containing a liquid CVD source material, a material feeder for feeding the liquid CVD source material to a vaporizer for vaporizing the liquid CVD source material, and a reaction chamber for forming the thin film on the substrate using the CVD source material gas. Both the vaporizer and piping between the vaporizer and the reaction chamber are located in a thermostatic box surrounding the reaction chamber. Thus, the structure of the apparatus is simplified and also the heat efficiency of the apparatus is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.