Method for depositing diamond films by dielectric barrier discharge
US5776553A · kind A · utility
31Cited by
17References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Feb 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32348
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for depositing diamond film, including the following steps: providing an environment comprising hydrogen gas and a hydrocarbon gas; dissociating hydrogen gas of the environment by dielectric barrier discharge to obtain atomic hydrogen; and providing a deposition surface in the environment and implementing diamond deposition on the deposition surface from the hydrocarbon gas, assisted by the atomic hydrogen. In a preferred embodiment, the atomic hydrogen is transported by molecular diffusion from its dissociation site to the deposition surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.