Method for fabricating semiconductor device having titanium silicide film
US5776822A · kind A · utility
40Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1997 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Jan 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a semiconductor device disclosed herein, a titanium film (131) is formed on a silicon layer and a titanium disilicide film (134) of a C49 structure is formed by the first rapid thermal annealing, followed by removing a titanium nitride film (132). The titanium disilicide film (134) thus formed is then subjected to phase transition to form titanium disilicide film (135a) of a C54 structure, and the titanium-excess titanium silicide film (133) is selectively removed by the second wet etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.