Tunable semiconductor device
US5777384A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Oct 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The device includes a substrate (18). A first semiconductor die (12) is disposed on the substrate (18). The first semiconductor die (12) has a major surface (23) and at least a portion of the major surface (23) is positioned to receive a cooling medium. A signal input region (24), an active region (32) and a conductive region (34) are disposed on the major surface (23). The conductive region (34) is coplanar with, and electrically couples, the signal input region (24) and the active region (32). An electrically reactive metal region (42) is in communication with the signal input region (24). The electrically reactive metal region (42) is sized to allow real-time iterative tuning of the electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.