Transparent and opaque metal-semiconductor-metal photodetectors
US5777390A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1995 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Oct 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/244
Abstract
An improved metal-semiconductor-metal (MSM) photodiode, specifically a new high responsivity AND high bandwidth photodetector, resulting in a high gain-bandwidth product is disclosed. The disclosed device is an MSM photodiode in which the anode and cathode are made of different materials of differing opacity and possibly including different electrode dimensions as well. Using an opaque anode and a transparent cathode reduces surface reflections off the opaque electrodes allowing more light to be absorbed within the active semiconductor region. However, it concurrently keeps the transit distance for the slower moving holes to a minimum. Thus, the long tail in the impulse response due to hole collection is minimized, resulting in increased bandwidth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.