Method for the high-linearity copying of voltage
US5777495A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Feb 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/70
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A device for copying a voltage (Ve) comprises a pair of series-connected MOS transistors, their sources forming a common point. The voltage (Ve) to be copied is applied between the gate of the first MOS transistor of the pair and a reference. Means are provided to inject a flux of electrons at a common point. A storage capacitor has a first terminal connected to the drain of the second MOS transistor and a second terminal designed to be biased. Means dictate a potential at the drain of the second MOS transistor and then let it vary so that the flux of electrons is stored in the storage capacitor while at the same time decreasing in the second MOS transistor to the benefit of the first one. The copied voltage Vs is available, after stabilization, between the first terminal of the storage capacitor and the reference. Application in particular to circuits for the reading of charges generated in a photosensitive matrix or photosensitive linear array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.