Select gate enhanced high density read-only-memory device
US5777919A · kind A · utility
56Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Sep 13, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/126
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is related to an enhanced high density Read-Only-Memory (ROM) device with select gate. A thin oxide layer is deposited on the ROM cell matrix and it is extended to the select lines which is on the top and bottom side of the ROM cell matrix to form the select gate. The ROM cell matrix can be organized more flexible by using the buried layers to pick out the unwanted gates. The metal contact can be directly made in this extended region too. Thereafter it reduces the manufacturing cost and achieves a high speed and density and simple process device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.