Thin film deposition chamber with ECR-plasma source
US5779802A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1995 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Aug 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process chamber is described wherein a plasma is generated by electron-cyclotron resonance (ECR) and is isolated from chamber walls by a magnetic field from two diametrically-opposed solenoids. A substance to be deposited on a substrate is introduced into the chamber by laser ablation, evaporation, or other techniques. The ECR plasma has a relatively large volume to ensure a homogeneous influx of material, and a low potential that results in less aggressive ion bombardment of the substrate. The process chamber can be used in a variety of processes, including deposition and oxidation of superconducting metal oxides, and reduction of indium-tin-oxide with nitrogen at low temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.