Aluminum nitride substrate and method of producing the same
US5780162A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1995 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Jun 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum nitride (AlN) substrate comprising an AIN sinter, an Al.sub.2 O.sub.3 layer provided on the sinter, and a glass-mixed Al.sub.2 O.sub.3 layer which is provided on the Al.sub.2 O.sub.3 layer and contains Al.sub.2 O.sub.3 and glass mixed therewith, preferably with an oxide particle-dispersed glass layer and a main glass layer provided on the glass-mixed Al.sub.2 O.sub.3 layer. The AlN substrate has heat dissipation properties closer to those of AlN itself, does not cause generation of air bubbles at the junction interface between the AlN sinter and the glass-containing layer, and has excellent surface smoothness and corrosion resistance. The very fine conductive layer, etc. may be readily and firmly formed on the substrate in a stable manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.