Apparatus for forming oxide film of semiconductor device
US5780317A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1996 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Dec 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxidizing apparatus and a method for forming an oxide film by controlling the oxide film growth using the same are provided. The apparatus includes an oxide film growing means, oxide film thickness measuring means and controlling means in order to form an oxide film of a desired thickness on a wafer. Here, the controlling means automatically calculates the oxide film growing time corresponding to a target thickness of an oxide film to be grown on the wafer. Accordingly, operation is simplified and a differing thicknesses of the oxide film in each batch is minimized, to thereby enhance reliability with respect to a precess and produce uniform product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.