Patent · US Expired

Break-over photodiode

US5780877A · kind A · utility

6Cited by

1References

10Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Bernd Bireckoven · Tübingen, DE
Dirk Hoheisel · Reutlingen, DE
Ning Qu · Beijing, CN

Key dates

Filing date	Feb 6, 1997
Grant date	Jul 14, 1998
Priority date	—
Expiry date	Feb 6, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH10F30/263
WIPO fieldEngines, pumps, turbines
WIPO sectorMechanical engineering

Abstract

A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage break-over diode. The break-over photodiode can be triggered by lateral illumination in an edge zone, and includes a gate-layer resistivity under the emitter which is greater in an edge zone of the break-over photodiode than in the central zone of the break-over photodiode. The light sensitivity of the laterally illuminatable break-over photodiode is increased by a greater gate-layer resistivity in the edge zone as compared to the central zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.